III-V族半導体装置

ALD対応のIII-V族デバイス：エピタキシャル成長、多成分膜、パッシベーション層

デバイス品質のAlNのエピタキシャル成長 [2]、InN [1] およびGaN [3] は最近、Veeco/CNT Fiji®で実証されました。以下の図1で、HRTEMとIFFTは、α-サファイアと整列した結晶性InNを確認します。図2は、GaN上に成長した高品質のAlNを示しています。ロッキング カーブのFWHMは、37nm膜に対して670 arc secです。これは、MBEで成長した1.6 μmに相当します（420 arc sec）。

高電子移動度トランジスタは、格子整合半導体間の界面での高移動度2D電子ガスの形成に基づいています。表1は、すべてのALD HEMTデバイス（ALE GaN/ALE AlGaN/ALD Al2O3）の低いキャリア濃度と高い移動度を示し、2D電子ガスの存在を示しています。さらに、ALE-AlNによる表面パッシベーションにより、HEMTデバイスの性能の向上が示されています [5]。グラフェンの表面機能化を維持する低温のALDにより、ハイブリッド グラフェン/III-N族ヘテロ構造が成長しました [6]。

III-V族デバイスに対するALDの利点

• 低蒸着温度
• これまで対応できなかった相を含む合金が成長しやすい
• ナノワイヤーのような3D構造への蒸着

表1：ALD/ALEを介したHEMTデバイス [4]

参考資料 – Veeco CNT ALDプラットフォームで行われた最新の刊行物

1. Nepal, N., Anderson, V. R., Hite, J. K. & Eddy, C. R., Jr. Growth and Characterization of III-N Ternary Thin Films by Plasma Assisted Atomic Layer Epitaxy at Low Temperatures. Thin Solid Films 1–17 (2015). doi:10.1016/j.tsf.2015.04.068
2. Ozgit-Akgun, C. et al. Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition. J. Mater. Chem. C (2015). doi:10.1039/C5TC00343A
3. Altuntas, H., Ozgit-Akgun, C., Donmez, I. & Biyikli, N. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films. J Appl Phys 117, 155101 (2015).
4. OConnor, E. et al. Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors. Microelectron Eng (2015). doi:10.1016/j.mee.2015.04.103
5. Kao, E., Yang, C., Warren, R., Kozinda, A. & Lin, L. ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors. TRANSDUCERS 2015 – 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference 498–501 (2015). doi:10.1109/TRANSDUCERS.2015.7180969
6. Haider, A., Ozgit-Akgun, C., Goldenberg, E., Okyay, A. K. & Biyikli, N. Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N 2/H 2Plasma. J Am Ceram Soc n/a–n/a (2014). doi:10.1111/jace.13213
7. Assaud, L., Pitzschel, K., Hanbucken, M. & Santinacci, L. Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition. ECS Journal of Solid State Science and Technology 3, P253–P258 (2014).
8. Koehler, A. D., Nepal, N., Anderson, J. T., Hobart, K. D. & Kub, F. J. Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy. in 135 (2013).
9. Ozgit-Akgun, C., Donmez, I. & Biyikli, N. (Invited) Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films. ECS Transactions 58, 289–297 (2013).
10. Eddy, C. R., Jr, Nepal, N., Hite, J. K. & Mastro, M. A. Perspectives on future directions in III-N semiconductor research. Journal Of Vacuum Science & Technology A-Vacuum Surfaces And Films 31, 058501 (2013).
11. Nepal, N. et al. Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices. Appl Phys Express 6, 061003 (2013).
12. Nepal, N. et al. Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy. Cryst Growth Des 13, 1485–1490 (2013).
13. Ozgit-Akgun, C., Kayaci, F., Donmez, I., Uyar, T. & Biyikli, N. Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition. J Am Ceram Soc n/a–n/a (2012). doi:10.1111/jace.12030<
14. Ozgit, C., Donmez, I., Alevli, M. & Biyikli, N. Atomic layer deposition of GaN at low temperatures. J Vac Sci Technol A 30, (2012).
15. Biyikli, N., Ozgit, C. & Donmez, I. Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition. Nanosci Nanotechnol Lett4, 1008–1014 (2012).
16. Ozgit, C., Donmez, I., Alevli, M. & Biyikli, N. Atomic layer deposition of GaN at low temperatures. J Vac Sci Technol A 30, 01A124 (2012).
17. Alevli, M., Ozgit, C., Donmez, I. & Biyikli, N. Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures. phys. stat. sol. (a) 209, 266–271 (2011).
18. Alevli, M., Ozgit, C., Donmez, I. & Biyikli, N. The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition. J Cryst Growth 335, 51–57 (2011).
19. Alevli, M., Ozgit, C. & Donmez, I. The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition. ACTA PHYSICA POLONICA A (2011).
20. Ozgit, C., Donmez, I. & Biyikli, N. Self-Limiting Growth of GaN at Low Temperatures. ACTA PHYSICA POLONICA A (2011).